Comparison of Semiconductor Material Properties
Radar chart comparing the key physical and electrical properties of Silicon (Si), 4H-SiC, GaN, GaAs, and Diamond across bandgap, electron mobility, hole mobility, critical electric field, and thermal conductivity.
| Label | Value shown on the chart |
|---|---|
| Max Bandgap (eV) | 5.5 |
| Max Electron mobility (cm²/V·s) | 8500 |
| Max Hole mobility (cm²/V·s) | 3800 |
| Max Critical electric field (MV/cm) | 10 |
| Max Thermal conductivity (W/cm·K) | 22 |
Shown as a preview with credit and a link to the original. Publishers can request removal.
View the original on konvoy.vc
